Micron Memory Part Number Decoder Jun 2026

Defines the maximum operating frequency and latency.

A standard Micron DRAM part number (e.g., ) follows a specific logical structure: Description Prefix MT Micron Technology Technology 40 Product Family (e.g., 40=DDR4, 41=DDR3, 53=LPDDR4) Voltage A Operating Voltage (e.g., A=1.2V, K=1.35V) Density/Width 1G8 Chip Depth and Width (e.g., 1G x 8 bits) Speed Grade -062E Max Clock Frequency/Data Rate (e.g., -062E = 3200 MT/s) Revision :E Die Revision designator 3. NAND Flash Part Numbering micron memory part number decoder

The character following the colon indicates the design generation or "die shrink": : First generation of that specific die. :B : Second generation revision. Defines the maximum operating frequency and latency

This paper outlines the technical framework and methodology for decoding Micron Technology's memory part numbering systems. Technical Analysis: Micron Memory Part Number Decoding 1. Introduction to Micron Part Numbering :B : Second generation revision

Micron DRAM part numbers (e.g., MT40A1G8SA-075:E ) follow a specific hierarchical nomenclature: Prefix/Code Manufacturer Prefix Micron Technology Product Family Identifies the technology generation 40 = DDR4; 41 = DDR3; 60 = DDR5 Voltage Operating voltage of the die A = 1.2V; K = 1.35V; L = 1.2V Density/Width Memory capacity and bus width 1G8 = 1Gb depth x 8-bit width; 256M16 = 256Mb x 16-bit Speed Grade Performance rating -075 = 2666 MT/s; -062E = 3200 MT/s Die Revision Post-colon letter indicating the silicon "step"

Micron DRAM component part numbers typically look like this: .

By mastering these codes, you eliminate the guesswork from hardware maintenance and upgrades.